Room temperature write-read operations in antiferromagnetic memory

摘要

B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic(AF-F) phase transitions in the vicinity of room temperature. Manipulation ofthe N\'eel order via AF-F phase transition and recent experimental observationof the anisotropic magnetoresistance in antiferromagnetic FeRh has proven thatFeRh is a promising candidate for antiferromagnetic memory material. In thiswork, we demonstrate sequential write and read operations in antiferromagneticmemory resistors made of B2-orderd FeRh thin films by a magnetic field andelectric current only. Our demonstration of writing and reading at ambient roomtemperature opens a realistic pathway towards operational antiferromagneticmemory devices.